MRFE6VP5600HR6 N-Channel Broadband RF Power MOSFETs
Created: Oct 14, 2015
No description available.
This reference design is an RF Broadband Power Amplifier that utilizes the Freescale’s MRFE6VP5600HR6 N-channel broadband RF MOSFET. This device is an N-Channel Enhancement-Mode lateral MOSFET that acts as RF power field effect transistors. The unmatched input and output design of this device allows wide frequency range operation, between 1.8MHz and 600MHz. Its typical output power performance is 600W peak if the input is a 100us 20% duty cycle pulsed signal and 600W average if the input signal is a continuous wave. The device can handle load mismatch of 65:1 voltage standing wave ratio (VSWR).
The schematic diagram in this reference design is a test circuit designed to demonstrate the capabilities of the MRFE6VP5600HR6 device. The test circuit in this design uses a pulsed signal as its input. The MRFE6VP5600HR6 device is paired with resistors, capacitors, inductors, coaxial cables, and microstrips with right values and exact sizes to achieve the desired performance of the device. The left part of the circuit is the input side with a pulsed signal and a bias to drive the gate to source junction of the power MOSFETs and the right part of the circuit is the output side with the supply voltage for the device. The whole circuit is soldered into a PCB that has the right material, properties and layout to achieve lower loss, higher antenna efficiencies, and greater phase stability.
This device is designed for applications that has a high VSWR. The range of the drain-source voltage that can be applied to it is between -0.5 up to 130VDC and gate-source voltage is between -6.0 to 10VDC. The operating junction temperature of the device must not exceed 225 degree celsius so that the mean time to failure (MTTF) will not be affected.